User Publications (non-In-House Research)

  • P.J. Robinson, G. Liu, S. Ciborowski, C. Martinez-Martinez, J.R. Chamorro, X. Zhang, T.M. McQueen, K.H. Bowen, and A.N. Alexandrova, “Mystery of Three Borides: Differential Metal–Boron Bonding Governing Superhard Structures,” Chem. Mater. 29, 9892–9896 (2017).
  • Z. Wang, Z. Chen, A.B. Mei, X. Bai, L.F. Kourkoutis, D.A. Muller, and D.G. Schlom, “Growth of LaAlO3 on Silicon via an Ultrathin SrTiO3 Buffer Layer by Molecular-Beam Epitaxy,” J. Vac. Sci. Technol. A 36, 021507 (2018).
  • E. Turgut, H. Paik, K. Nguyen, D.A. Muller, D.G. Schlom, and G.D. Fuchs, “Engineering Dzyaloshinskii-Moriya Interaction in B20 Thin-Film Chiral Magnets,” Phys. Rev. Mater. 2, 074404 (2018).
  • Z. Wang, H.P. Nair, G.C. Correa, J. Jeong, K. Lee, E.S. Kim, A. Seidner H., C.S. Lee, H.J. Lim, D. A. Muller, and D.G. Schlom, “Epitaxial Integration and Properties of SrRuO3 on Silicon,” APL Mater. 6, 086101 (2018).
  • S. Im, Z. Chen, J. M. Johnson, P. Zhao, G.H. Yoo, E.S. Park, Y. Wang, D.A. Muller, and J. Hwang, “Direct Determination of Structural Heterogeneity in Metallic Glasses using Four-Dimensional Scanning Transmission Electron Microscopy,” Ultramicroscopy 195, 189–193 (2018).
  • C. Sacco, A. Galdi, F. Romeo, N. Coppola, P. Orgiani, H. Wei, B.H. Goodge, L.F Kourkoutis, K. Shen, D.G. Schlom, and L. Maritato, “Carrier Confinement Effects Observed in the Normal-State Electrical Transport of Electron-Doped Cuprate Trilayers,” J. Phys. D: Appl. Phys. 52, 135303 (2019).
  • H. Zheng, J. Zhang, B. Wang, D. Phelan, M.J. Krogstad, Y. Ren, W.A. Phelan, O. Chmaissem, B. Poudel, and J.F. Mitchell, “High pO2 Floating Zone Crystal Growth of the Perovskite Nickelate PrNiO3,” Crystals 9, 324 (2019)
  • Z. Wang, B.H. Goodge, D.J. Baek, M.J. Zachman, X. Huang, X. Bai, C.M. Brooks, H. Paik, A.B. Mei, J.D. Brock, J-P. Maria, L.F. Kourkoutis, and D.G. Schlom “Epitaxial SrTiO3 Film on Silicon With Narrow Rocking Curve Despite Huge Defect Density,” Phys. Rev. Mater. 3, 073403 (2019)
  • J. Jiang, X. Sun, X. Chen, B. Wang, Z. Chen, Y. Hu, Y. Guo, L. Zhang, Y. Ma, L. Gao, F. Zheng, L. Jin, M. Chen, Z. Ma, Y. Zhou, N. Padture, K. Beach, H. Terrones, Y. Shi, D. Gall, T. Lu, E. Wertz, J. Feng, and J. Shi, “Carrier Lifetime Enhancement in Halide Perovskite via Remote Epitaxy,” Nat. Commun. 10, 4145 (2019).
  • P.B. Meisenheimer, L.D. Williams, S.H. Sung, J. Gim, P. Shafer, G.N. Kotsonis, J.P. Maria, M. Trassin, R. Hovden, E. Kioupakis, and J.T. Heron, “Magnetic Frustration Control Through Tunable Stereochemically Driven Disorder in Entropy-stabilized Oxides,” Phys. Rev. Mater. 3, 104420 (2019).
  • J.M. Johnson, Z. Chen, J.B. Varley, C.M. Jackson, E. Farzana, Z. Zhang, A.R. Arehart, H.L. Huang, A. Genc, S.A. Ringel, C.G. Van de Walle, D.A. Muller, and J. Hwang, “Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3,” Phys. Rev. X 9, 041027 (2019)
  • J. Xu, W.A. Phelan, and C.L. Chien, “Large Anomalous Nernst Effect in a van der Waals Ferromagnet Fe3GeTe2,”Nano Lett. 19, 8250 (2019)