Corona Virus Information Updated June 5, 2020

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User Publications (non-In-House Research)

non in house

  1. P.J. Robinson, G. Liu, S. Ciborowski, C. Martinez-Martinez, J.R. Chamorro, X. Zhang, T.M. McQueen, K.H. Bowen, and A.N. Alexandrova, “Mystery of Three Borides: Differential Metal–Boron Bonding Governing Superhard Structures,” Chem. Mater. 29, 9892–9896 (2017).
  2. Z. Wang, Z. Chen, A.B. Mei, X. Bai, L.F. Kourkoutis, D.A. Muller, and D.G. Schlom, “Growth of LaAlO3 on Silicon via an Ultrathin SrTiO3 Buffer Layer by Molecular-Beam Epitaxy,” J. Vac. Sci. Technol. A 36, 021507 (2018).
  3. E. Turgut, H. Paik, K. Nguyen, D.A. Muller, D.G. Schlom, and G.D. Fuchs, “Engineering Dzyaloshinskii-Moriya Interaction in B20 Thin-Film Chiral Magnets,” Phys. Rev. Mater. 2, 074404 (2018).
  4. A.B. Mei, Y. Tang, J.L. Grab, J. Schubert, D.C. Ralph, and D.G. Schlom, “Structural, Magnetic, and Transport Properties of Fe1–xRhx/MgO(001) Films grown by Molecular-Beam Epitaxy,” Appl. Phys. Lett. 113, 082403 (2018).
  5. Z. Wang, H.P. Nair, G.C. Correa, J. Jeong, K. Lee, E.S. Kim, A. Seidner H., C.S. Lee, H.J. Lim, D.A. Muller, and D.G. Schlom, “Epitaxial Integration and Properties of SrRuO3 on Silicon,” APL Mater. 6, 086101 (2018).
  6. M. Velický, G.E. Donnelly, W.R. Hendren, S. McFarland, D. Scullion, W.J.I. DeBenedetti, G.C. Correa, Y. Han, A.J. Wain, M.A. Hines, D.A. Muller, K.S. Novoselov, H.D. Abruña, R.M. Bowman, E.J.G. Santos, and F. Huang, “Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayers,” ACS Nano 12, 10463–10472 (2018).
  7. S.J. Bader, R. Chaudhuri, K. Nomoto, A. Hickman, Z. Chen, H.W. Then, D.A. Muller, H.G. Xing, and D. Jena, “Gate-Recessed E-mode p-Channel HFET with High On-Current Based on GaN/AlN 2D Hole Gas,” IEEE Electron Device Lett. 39, 1848–1851 (2018).
  8. S. Im, Z. Chen, J. M. Johnson, P. Zhao, G.H. Yoo, E.S. Park, Y. Wang, D.A. Muller, and J. Hwang, “Direct Determination of Structural Heterogeneity in Metallic Glasses using Four-Dimensional Scanning Transmission Electron Microscopy,” Ultramicroscopy 195, 189–193 (2018).
  9. Z. Wang, H. Paik, Z. Chen, D.A. Muller, and D.G. Schlom, “Epitaxial Integration of High-Mobility La-Doped BaSnO3 Thin Films with Silicon,” APL Mater. 7, 022520 (2019).
  10. C. Sacco, A. Galdi, F. Romeo, N. Coppola, P. Orgiani, H. Wei, B.H. Goodge, L.F. Kourkoutis, K. Shen, D.G. Schlom, and L. Maritato, “Carrier Confinement Effects Observed in the Normal-State Electrical Transport of Electron-Doped Cuprate Trilayers,” J. Phys. D: Appl. Phys. 52, 135303 (2019).
  11. H. Zheng, J. Zhang, B. Wang, D. Phelan, M.J. Krogstad, Y. Ren, W.A. Phelan, O. Chmaissem, B. Poudel, and J.F. Mitchell, “High pO2 Floating Zone Crystal Growth of the Perovskite Nickelate PrNiO3,” Crystals 9, 324 (2019).
  12. C. Sacco, A. Galdi, P. Orgiani, N. Coppola, H.I. Wei, R. Arpaia, S. Charpentier, F. Lombardi, B. Goodge, L.F Kourkoutis, K.M. Shen, D.G. Schlom, and L. Mariato, “Low Temperature Hidden Fermi-liquid Charge Transport in Under Doped LaxSr1-xCuO2 Infinite Layer Electron-doped Thin Films,” J. Phys.: Condens. Matter. 31, 445601 (2019).
  13. Z. Wang, B.H. Goodge, D.J. Baek, M.J. Zachman, X. Huang, X. Bai, C.M. Brooks, H. Paik, A.B. Mei, J.D. Brock, J-P. Maria, L.F. Kourkoutis, and D.G. Schlom “Epitaxial SrTiO3 Film on Silicon With Narrow Rocking Curve Despite Huge Defect Density,” Phys. Rev. Mater. 3, 073403 (2019).
  14. J. Jiang, X. Sun, X. Chen, B. Wang, Z. Chen, Y. Hu, Y. Guo, L. Zhang, Y. Ma, L. Gao, F. Zheng, L. Jin, M. Chen, Z. Ma, Y. Zhou, N. Padture, K. Beach, H. Terrones, Y. Shi, D. Gall, T. Lu, E. Wertz, J. Feng, and J. Shi, “Carrier Lifetime Enhancement in Halide Perovskite via Remote Epitaxy,” Nat. Commun. 10, 4145 (2019).
  15. R. Chaudhuri, S. Bader, Z. Chen, D.A. Muller, H.G. Xing, and D. Jena, “A Polarization-induced 2D Hole Gas in Undoped Gallium Nitride Quantum Wells,” Science 365, 1454 – 1457 (2019).
  16. A.B. Mei, L. Miao, M.J. Wahila, G. Khalsa, Z. Wang, M. Barone, N.J. Schreiber, L.E. Noskin, H. Paik, T.E. Tiwald, Q. Zheng, R.T. Haasch, D.G. Sangiovanni, L.F.J. Piper, and D.G. Schlom, “Adsorption-Controlled Growth and Properties of Epitaxial SnO Films,” Phys. Rev. Mater. 3, 105202 (2019).
  17. I. Gray, T. Moriyama, N. Sivadas, G.M. Stiehl, J.T. Heron, R. Need, B.J. Kirby, D.H. Low, K.C. Nowack, D.G. Schlom, D.C. Ralph, T. Ono, and G.D. Fuchs, “Spin Seebeck Imaging of Spin-torque Switching in Antiferromagnetic Pt/NiO Heterostructures,” Phys. Rev. X 9, 041016 (2019).
  18. P.B. Meisenheimer, L.D. Williams, S.H. Sung, J. Gim, P. Shafer, G.N. Kotsonis, J.P. Maria, M. Trassin, R. Hovden, E. Kioupakis, and J.T. Heron, “Magnetic Frustration Control Through Tunable Stereochemically Driven Disorder in Entropy-Stabilized Oxides,” Phys. Rev. Mater. 3, 104420 (2019).
  19. J. Xu, W.A. Phelan, and C.L. Chien, “Large Anomalous Nernst Effect in a van der Waals Ferromagnet Fe3GeTe2,”Nano Lett. 19, 8250 (2019).
  20. J.M. Johnson, Z. Chen, J.B. Varley, C.M. Jackson, E. Farzana, Z. Zhang, A.R. Arehart, H.L. Huang, A. Genc, S.A. Ringel, C.G. Van de Walle, D.A. Muller, and J. Hwang, “Unusual Formation of Point Defect Complexes in the Ultra-Wide Band Gap Semiconductor b-Ga2O3,” Phys. Rev. X 9, 041027 (2019).
  21. I. Gray, G.M. Stiehl, J.T. Heron, A.B. Mei, D.G. Schlom, R. Ramesh, D.C. Ralph, and G.D. Fuchs, “Imaging Uncompensated Moments and Exchange-biased Emergent Ferromagnetism in FeRh Thin Films,” Phys. Rev. Materials 3, 124407 (2019).
  22. J. Sun, M.R. Barone, C.S. Chang, M. E. Holtz, H. Paik, J. Schubert, D.A. Muller, and D.G. Schlom, “Growth of PdCoO2 Thin Films by Molecular-Beam Epitaxy,” APL Materials 7, 121112 (2019).
  23. Y. Hu, F. Florio, Z. Chen, W.A. Phelan, M.A. Siegler, Z. Zhou, Y. Guo, R. Hawks, J. Jiang, J. Feng, L. Zhang, B. Wang, Y. Wang, D. Gall, E.F. Palermo, Z. Lu, X. Sun, T.-M. Lu, H. Zhou, Y. Ren, E. Wertz, R. Sundararaman, and J. Shi, “A Chiral Switchable Photovoltaic Ferroelectric 1D Perovskite,” Science Adv. 6, eaay4213 (2020).
  24. D. Du, P.J. Strohbeen, H. Paik, C. Zhang, K. Genser , K.M. Rabe, P.M. Voyles, D.G. Schlom, and J.K. Kawasaki, “Control of Polymorphism During Epitaxial Growth of Hyperferroelectric Candidate LiZnSb on GaSb (111)B,” J. Vac. Sci. Tech. B 38, 022208 (2020).
  25. R. Chaudhuri, S.J. Bader, Z. Chen, D.A. Muller, H.G. Xing, D. Jena, “MBE Growth of Large-Area GaN/AlN 2-Dimensional Hole Gas Heterostructures,” Phys. Status Solidi 257, 1900567 (2020).
  26. V. Sunko, P.H. McGuinness, C.S. Chang, E. Zhakina, S. Khim, C.E. Dreyer, M. Konczykowski, M. König, D.A. Muller, and A.P. Mackenzie, “Controlled Introduction of Defects to Delafossite Metals by Electron Irradiation,” Phys. Rev. X 10, 021018 (2020).
  27. Y. Cho, C.S. Chang, K. Lee, M. Gong, K. Nomoto, M. Toita, L.J. Schowalter, D.A. Muller, D. Jena, and H.G. Xing, “Molecular Beam Homoepitaxy on Bulk AlN Enabled by Aluminum-Assisted Surface Cleaning,” Appl. Phys. Lett. 116, 172106 (2020).
  28. M.K.I. Senevirathna, M.D. Williams, G.A. Cooke, A. Kozhanov, M. Vernon, and G.B. Cross, “Analysis of Useful Ion Yield for the Mg Dopant in GaN by Quadrupole–SIMS,” J. Vac. Science & Technol. B 38, 034015 (2020).
  29. G.J. Paez, C.N. Singh, M.J. Wahila, K.E. Tirpak, N.F. Quackenbush, S. Sallis, H. Paik, Y. Liang, D.G. Schlom, T.-L. Lee, C. Schlueter, W.-C. Lee, and L.F.J. Piper, “Simultaneous Structural and Electronic Transitions in Epitaxial VO2/TiO2(001),” Phys. Rev. Lett. 124, 196402 (2020).
  30. M. Straker, A. Chauhan, M. Sinha, W.A. Phelan, M.V.S.Chandrashekhar, K.J. Hemker, C. Marvel, and M. Spencer, “Growth of High Purity Zone-Refined Boron Carbide Single Crystals by Laser Diode Floating Zone Method,” J. Cryst. Growth 543, 125700 (2020).
  31. M.K.I. Senevirathna, M. Vernon, G.A. Cooke, G.B. Cross, A. Kozhanov, and M.D. Williams, “Analysis of Useful Ion Yield for Si in GaN by Secondary Ion Mass Spectrometry,” J. Vac. Science & Technol. B 38, 044002 (2020).
  32. A.B. Mei, I. Gray, Y. Tang, J. Schubert, D. Werder, J. Bartell, D.C. Ralph, G.D. Fuchs, and D.G. Schlom, “Local Photothermal Control of Phase Transitions for On-Demand Room-Temperature Rewritable Magnetic Patterning,” Adv. Mater. 32, 2001080 (2020).