Key publications of the In-house Research

  • D. MacNeill, G.M. Stiehl, M.H.D. Guimaraes, R.A. Buhrman, J. Park, and D.C. Ralph, “Control of Spin–Orbit Torques through Crystal Symmetry in WTe2/Ferromagnet Bilayers,” Nat. Phys. 13, 300–305 (2017).
  • Y.-T. Hsu, A. Vaezi, M.H. Fischer, and E.-A. Kim, “Topological Superconductivity in Monolayer Transition Metal Dichalcogenides,” Nat. Commun. 8, 14985 (2017).
  • A. Kerelsky, A. Nipane, D. Edelberg, D. Wang, X. Zhou, A. Motmaendadgar, H. Gao, S. Xie, K. Kang, J. Park, J. Teherani, and A. Pasupathy, “Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2,” Nano Lett. 17, 5962–5968 (2017).
  • K. Kang, K.-H. Lee, Y. Han, H. Gao, S. Xie, D.A. Muller, and J. Park, “Layer-by-Layer Assembly of Two-Dimensional Materials into Wafer-Scale Heterostructures,” Nature 550, 229–233 (2017)
  • M.C. Cao, Y. Han, Z. Chen, Y. Jiang, K.X. Nguyen, E. Turgut, G.D. Fuchs, and D.A. Muller, “Theory and Practice of Electron Diffraction from Single Atoms and Extended Objects using an EMPAD,” Microscopy 67, i150–i161 (2018).
  • S. Xie, L. Tu, Y. Han, L. Huang, K. Kang, K.U. Lao, P. Poddar, C. Park, D.A. Muller, R.A. DiStasio, and J. Park, “Coherent, Atomically Thin Transition-Metal Dichalcogenide Superlattices with Engineered Strain,” Science 359, 1131–1136 (2018).
  • S.C. de la Barrera, M.R. Sinko, D.P. Gopalan, N. Sivadas, K.L. Seyler, K. Watanabe, T. Taniguchi, A.W. Tsen, X. Xu, D. Xiao, and B.M. Hunt, “Tuning Ising Superconductivity with Layer and Spin-Orbit Coupling in Two-Dimensional Transition-Metal Dichalcogenides,” Nat. Commun. 9, 1427 (2018).
  • E.B. Lochocki, H. Paik, M. Uchida, D.G. Schlom, and K.M. Shen, “Controlling Surface Carrier Density by Illumination in the Transparent Conductor La-doped BaSnO3,” Appl. Phys. Lett. 112, 181603 (2018).
  • J.K. Kawasaki, D. Baek, H. Paik, H.P. Nair, L.F. Kourkoutis, D.G. Schlom, and K.M. Shen, “Rutile IrO2/TiO2 Superlattices:  A Hyperconnected Analog to the Ruddelsden-Popper Structure,” Phys. Rev. Mater. 2, 054206 (2018).
  • B.J. Ramshaw, K.A. Modic, A. Shekhter, Y. Zhang, E-A. Kim, P.J.W. Moll, M.D. Bachmann, M.K. Chan, J.B. Betts, F. Balakirev, A. Migliori, N.J. Ghimire, E.D. Bauer, F. Ronning, and R.D. McDonald, “Quantum Limit Transport and Destruction of the Weyl Nodes in TaAs,” Nat. Commun. 9, 2217 (2018).
  • Y.M. Oey, J.E. Park, J. Tao, E.M. Carnicom, T. Kong, M.B. Sanders, and R.J. Cava, “Stabilizing the Tb-based 214 Cuprate by Partial Pd Substitution,” J. Mater. Res. 33, 1690–1697 (2018).
  • B.H. Savitzky, I. El Baggari, C.B. Clement, E. Waite, B.H. Goodge, D.J. Baek, J.P. Sheckelton, C. Pasco, H. Nair, N.J. Schreiber, J. Hoffman, A.S. Admasu, J. Kim, S.-W. Cheong, A. Bhattacharya, D.G. Schlom, T.M. McQueen, R. Hovden, and L.F. Kourkoutis, “Image Registration of Low Signal-to-Noise Cryo-STEM Data,” Ultramicroscopy 191, 56–65 (2018).
  • Y. Jiang, Z. Chen, Y. Han, P. Deb, H. Gao, S. Xie, P. Purohit, M.W. Tate, J. Park, S.M. Gruner, V. Elser, and D.A. Muller, “Electron Ptychography of 2D Materials to Deep Sub-Ångström Resolution,” Nature 559, 343–349 (2018).
  • R. Hovden, P. Liu, N. Schnitzer, A.W. Tsen, Y. Liu, W. Lu, Y. Sun, and L.F. Kourkoutis, “Thickness and Stacking Sequence Determination of Exfoliated Dichalcogenides (1T-TaS2, 2H-MoS2) Using Scanning Transmission Electron Microscopy,” Microsc. Microanal. 24, 387–395 (2018).
  • H.P. Nair, J.P. Ruf, N.J. Schreiber, L. Miao, M.L. Grandon, D.J. Baek, B.H. Goodge, J.P.C. Ruff, L.F. Kourkoutis, K.M. Shen, and D.G. Schlom, “Demystifying the Growth of Superconducting Sr2RuO4 Thin Films,” APL Mater. 6, 101108 (2018).
  • M. Velický, G.E. Donnelly, W.R. Hendren, S. McFarland, D. Scullion, W.J.I. DeBenedetti, G.C. Correa, Y. Han, A.J. Wain, M.A. Hines, D.A. Muller, K.S. Novoselov, H.D. Abruña, R.M. Bowman, E.J.G. Santos, and F. Huang, “Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayers,” ACS Nano 12, 10463–10472 (2018).
  • J.K. Kawasaki, C.H. Kim, J.N. Nelson, S. Crisp, C.J. Zollner, E. Bigenwald, J.T. Heron, C.J. Fennie, D.G. Schlom, and K.M. Shen, “Engineering Carrier Effective Masses in Ultrathin Quantum Wells of IrO2,” Phys. Rev. Lett. 121, 176802 (2018).
  • N. Sivadas, S. Okamoto, X. Xu, C.J. Fennie, and D. Xiao, “Stacking-Dependent Magnetism in Bilayer CrI3,” Nano Lett. 18, 7658−7664 (2018).
  • S.J. Bader , R. Chaudhuri, K. Nomoto, A. Hickman, Z. Chen, H.W. Then, D.A. Muller, H.G. Xing, and D. Jena, “Gate-Recessed E-mode p-Channel HFET with High On-Current Based on GaN/AlN 2D Hole Gas,” IEEE Electron Device Lett. 39, 1848–1851 (2018).
  • D-Y. Kuo, H. Paik, J. Kloppenburg, B. Faeth, K.M. Shen, D.G. Schlom, G. Hautier, and J. Suntivich, “Measurements of Oxygen Electroadsorption Energies and Oxygen Evolution Reaction on RuO2(110): A Discussion of the Sabatier Principle and its Role in Electrocatalysis,” J. Am. Chem. Soc. 140, 17597–17605 (2018).
  • D-Y. Kuo, H. Paik, J.N. Nelson, K.M. Shen, D.G. Schlom, and J. Suntivich, “Chlorine Evolution Reaction Electrocatalysis on RuO2(110) and IrO2(110) Grown Using Molecular-Beam Epitaxy,” J. Chem. Phys. 150, 041726 (2019).
  • D.R. Ni, S. Guo, Z.S. Yang, H-Y. Kuo, F.A. Cevallos, and R.J. Cava, “A Monoclinic Form of Anhydrous Cs2PdCl4,” Solid State Sci. 87, 118–123 (2019).
  • H. Boschker, T. Harada, T. Asaba, R. Ashoori, A.V. Boris, H. Hilgenkamp, C.R. Hughes, M.E. Holtz, L. Li, D.A. Muller, H. Nair, P. Reith, X. Renshaw Wang, D.G. Schlom, A Soukiassian, and J. Mannhart, “Ferromagnetism and Conductivity in Atomically Thin SrRuO3,” Phys. Rev. X 9, 011027 (2019).
  • E.B. Lochocki, S. Vishwanath, X.Y. Liy, M. Dobrowolska, J. Furdyna, H.L.G. Xing, and K.M. Shen, “Electronic Structure of SnSe2 Films Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 114, 091602 (2019).
  • G.M. Stiehl, D. MacNeill, N. Sivadas, I. El Baggari, M.H.D. Guimaraes, N.D. Reynolds, L.F. Kourkoutis, C.J. Fennie, R.A. Buhrman, and D.C Ralph, “Current-Induced Torques with Dresselhaus Symmetry Due to Resistance Anisotropy in 2D Materials,” ACS Nano 13, 2599-2605 (2019).
  • T. Kong, K. Stolze, E.I. Timmons, J. Tao, D.R. Ni, S. Guo, Z. Yang, R. Prozorov, and R.J. Cava, “VI3-a New Layered Ferromagnetic Semiconductor,” Adv. Mater. 31, 1808074 (2019).
  • M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuocco, R. Dittman, B. Dkhil, I. El Baggari, M. Fanciulli, I. Fina, E. Fortunato, C. Frontera, S. Fujita, V. Garcia, S.T.B. Goennenwein, C.G. Granqvist, R. Gross, A. Hagfeldt, G. Herranz, K. Hono, E. Houwman, M. Huijben, A. Kalaboukhov, D.J. Keeble, G. Koster, L.F. Kourkoutis, J. Levy, M. Lira-Cantu, J.L. MacManus-Driscoll, J. Mannhart, R.Martins, S. Menzel, T. Mikolajick, M. Napari, M.D. Nguyen, G. Niklasson, C. Paillard, S. Panigrahi, G. Rijinders, F. Sanchez, P. Sanchis, S. Sanna, D.G. Schlom, U. Schroeder, K.M. Shen, A. Siemon, M. Spreitzer, H. Sukegawa, R. Tamayo, J. van den Brink, N. Pryds, and F. Miletto Granozio, “Towards Oxide Electronics: a Roadmap,” Appl. Surf. Sci. 482, 1-93 (2019).
  • J. Vanderley and E.-A. Kim, “Evidence of Pair-density Wave in Spin-valley locked systems.” Sci. Adv. 5, eaat4698 (2019).
  • Y.X. Ou, Z. Wang, C.S. Chang, H.P. Nair, N. Reynolds, D.C. Ralph, D.A. Muller, D.G. Schlom, and R.A. Buhrman, “Exceptionally High, Strongly Temperature Dependent, Spin Hall Conductivity of SrRuO3,” Nano Lett. 19, 3663–3670 (2019).
  • J.N. Nelson, J.P. Ruf, Y. Lee, C. Zeledon, J.K. Kawasaki, S. Moser, C. Jozwiak, E. Rotenberg, A. Bostwick, D.G. Schlom, K.M. Shen, and L. Moreschini, “Dirac Nodal Lines Protected Against Spin-Orbit Interaction in IrO2,” Phys. Rev. Mater. 3, 064205 (2019).
  • A.R. Freyer, P.C. Sercel, Z.T. Hou, B.H. Savitzky, L.F. Kourkoutis, A.L. Efros, and T.D Krauss, “Explaing the Unusual Photoluminescence of Semiconductor Nanocrystals Doped via Cation Exchange,” Nano Lett. 19, 4797–4803 (2019).
  • C. Sacco, A. Galdi, P. Orgiani, N. Coppola, H.I. Wei, R. Arpaia, S. Charpentier, F. Lombardi, B. Goodge, L.F Kourkoutis, K. Shen, D.G. Schlom, and L. Mariato, “Low Temperature Hidden Fermi-liquid Charge Transport in Under Doped LaxSr1-xCuO2 Infinite Layer Electron-doped Thin Films,” J. Phys.: Condens. Matter. 31, 445601 (2019).